2SB1708 transistors 1/2 low frequency amplifier 2SB1708 ! application low frequency amplifier driver ! features 1) a collector current is large. (3a) 2) v ce(sat) ? 250mv at i c = ? 1.5a / i b = ? 30ma ! external dimensions (units : mm) ( 2 ) ( 1 ) ( 3 ) 0 0.1 0.16 0.85 1.0max 0.7 2.9 2.8 1.9 1.6 0.95 0.95 0.4 0.3 0.6 rohm : tsmt3 (1) emitter (2) base (3) collector each lead has same dimensions abbreviated symbol : yy ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits ? 30 ? 30 ? 6 ? 3 500 150 ? 55~ + 150 ? 6 ? unit v v v a a mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ? single pulse, p w = 1ms ! packaging specifications 2SB1708 t146 3000 type package code basic ordering unit (pieces) taping ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v cb =? 10v, i e = 0a, f = 1mhz f t ? 200 ? mhz v ce =? 2v, i e = 200ma, f = 100mhz bv cbo ? 30 ?? v i c =? 10 a bv ceo ? 30 ?? v i c =? 1ma bv ebo ? 6 ?? v i e =? 10 a i cbo ?? ? 100 na v cb =? 30v i ebo ?? ? 100 na v eb =? 6v v ce(sat) ?? 180 ? 250 mv i c =? 1.5a, i b =? 30ma h fe 270 ? 680 ? v ce =? 2v, i c =? 200ma cob ? 40 ? pf ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency collector output capacitance ? pulsed
2SB1708 transistors 2/2 ! ! ! ! electrical characteristic curves 0.001 0.01 0.1 1 10 collector current : i c (a) 10 100 1000 dc current gain : h fe v ce =? 2v pulsed ta = 25 c ta =? 40 c ta = 125 c fig.1 dc current gain vs. collector current 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 i c /i b = 20/1 pulsed ta = 25 c ta =? 40 c ta = 125 c collector current : i c (a) collector saturation voltage : v ce (sat) (v) fig.2 collector-emitter saturation voltage vs. collector current 0.1 1 10 0.001 0.01 0.1 1 10 collector current : i c (a) base saturation voltage : v be (sat) (v) ta = 25 c ta = 125 c ta =? 40 c i c /i b = 20/1 pulsed fig.3 base-emitter saturation voltage vs. collector current 0.1 1 10 base to emitter current : v be (v) 0.001 0.01 0.1 1 10 collector current : i c (a) v ce =? 2v pulsed ta = 25 c ta =? 40 c ta = 125 c fig.4 grounded emitter propagation characteristics 0.001 0.01 0.1 1 10 100 1 10 100 1000 f = 1mhz i c = 0a ta = 25 c collector output capacitance : cob (pf) emitter input capacitance : cib (pf) cib cob emitter to base voltage : v eb (v) collector to base voltage : v cb (v) fig.5 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 0.01 0.1 1 10 emitter current : i e (a) 10 100 1000 transition frequency : f t (mhz) ta = 25 c v ce =? 2v f = 100mhz fig.6 gain bandwidth product vs. emitter current 0.01 0.1 1 10 collector current : i c (a) 10 100 1000 10000 ta = 25 c v ce =? 12v i c /i b = 20/1 pulsed tstg tdon tr tf switching time : (ns) fig.7 switching time
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